ON Semiconductor FDB14N30TM MOSFET 1 N-Kanal 140 W TO-263-3

Stichwörter

ON Semiconductor, FDB14N30TM, FDB14N30TM, FDB14N30TMCT-ND, Fairchild, Fairchild Semiconductor, FET, Feldeffekt-transistor, fieldeffect-transistor, unipolar transistor, field-effect transistor, MOSFET, mos-fet, metal oxide semiconductor, transistor MOS, transistor à effet de champ, unipolartransistor, gate, drain, source, anreicherungstyp, verarmungstyp, selbstleitend, selbstsperrend, Junction fet, Sperrschicht-Feldeffekttransistor