IXYS IXTK170P10P MOSFET 1 P-Kanal 890 W TO-264

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02050001395474, IXYS, IXTK170P10P, IXTK170P10P, polar-p-kanal-mosfet, FET, Feldeffekt-transistor, fieldeffect-transistor, unipolar transistor, field-effect transistor, MOSFET, mos-fet, metal oxide semiconductor, transistor MOS, transistor à effet de champ, unipolartransistor, gate, drain, source, anreicherungstyp, verarmungstyp, selbstleitend, selbstsperrend, Junction fet, Sperrschicht-Feldeffekttransistor