IXYS IXTN170P10P MOSFET 1 P-Kanal 890 W SOT-227B

Stichwörter

02050001395481, IXYS, IXTN170P10P, IXTN170P10P, polar-p-kanal-mosfet, FET, Feldeffekt-transistor, fieldeffect-transistor, unipolar transistor, field-effect transistor, MOSFET, mos-fet, metal oxide semiconductor, transistor MOS, transistor à effet de champ, unipolartransistor, gate, drain, source, anreicherungstyp, verarmungstyp, selbstleitend, selbstsperrend, Junction fet, Sperrschicht-Feldeffekttransistor