Stichwörter
02050000035494, STMicroelectronics, STP16NF06L, STP16NF06L, 687-5383, 497-2765-5-ND, FET, Feldeffekt-transistor, fieldeffect-transistor, unipolar transistor, field-effect transistor, MOSFET, mos-fet, metal oxide semiconductor, transistor MOS, transistor à effet de champ, unipolartransistor, gate, drain, source, anreicherungstyp, verarmungstyp, selbstleitend, selbstsperrend, Junction fet, Sperrschicht-Feldeffekttransistor